* P2N2222A_TYP - Typical P2N2222A Gummel-Poon model (PSpice3 syntax)
* Source: ON Semiconductor P2N2222A datasheet (P2N2222A-D.PDF, Rev.7, 2013)
* Model prepared by AI-assisted extraction and physics-based derivation
* Date: 2025-10-10
* Notes: Typical model. Parameters marked "ESTIMATED" were not explicitly listed in the datasheet
* and were derived from datasheet curves/typical device physics. See parameter table and JSON summary.
.model P2N2222A_TYP NPN
+ IS=1.8e-14          ; A                     saturation current (typical) - derived
+ BF=200              ;                       forward DC current gain (typical)
+ NF=1.0              ;                       forward emission coeff
+ ISE=1.0e-13         ; A                     emitter leakage scale (estimated)
+ NE=1.5              ;                       emitter emission coeff (assumed)
+ IKF=0.25            ; A                     forward beta roll-off current (estimated from datasheet curves)
+ IKR=1.0e-3          ; A                     reverse roll-off (estimated)
+ ISC=1.0e-12         ; A                     collector leakage scale (estimated)
+ BR=5                ;                       reverse beta (estimated)
+ NR=1.0              ;                       reverse emission coeff
+ RB=10               ; Ohm                   base series resistance (typical)
+ RBM=3               ; Ohm                   minimum base resistance (estimated)
+ RC=0.30             ; Ohm                   collector series resistance (derived from VCE(sat) fit)
+ RE=0.20             ; Ohm                   emitter series resistance (estimated)
+ CJE=25e-12          ; F                     base-emitter junction capacitance (Cibo ~25 pF in datasheet)
+ VJE=0.75            ; V                     junction potential for CJE (typical)
+ MJE=0.33            ;                       grading coefficient for CJE (typical)
+ CJC=8e-12           ; F                     base-collector junction capacitance (Cobo ~8 pF)
+ VJC=0.75            ; V                     junction potential for CJC
+ MJC=0.33            ;                       grading coefficient for CJC
+ FC=0.5              ;                       forward-bias depletion cap coefficient
+ TF=4.0e-10          ; s                     forward transit time (approx from fT)
+ TR=1.0e-7           ; s                     reverse transit time / storage time (derived)
+ XTF=3               ;                       temp exponent for TF (default)
+ VTF=0.0             ; V                     TF voltage parameter (default)
+ ITF=0.0             ; A                     TF current scale (default)
+ PTF=0.0             ;                       TF exponent (default)
+ XTB=1.5             ;                       beta temperature coefficient
+ XTI=3               ;                       Is temperature exponent
+ EG=1.11             ; eV                    silicon bandgap
+ KF=1e-14            ;                       flicker noise coefficient (placeholder)
+ AF=1.0              ;                       flicker noise exponent (placeholder)
+ XCJC=1.0            ;                       fraction of CJC included in depletion model
+ CJS=0.0             ; F                     surface cap (not used)
+ VJS=0.75            ; V                     surface junction potential
+ MJS=0.5             ;                       surface grading coeff
+ TNOM=25)
* End of P2N2222A_TYP model